PhD Studentship in Gallium Nitride Semiconductor Electronic Devices

University of Sheffield - Department of Electronic and Electrical Engineering

A 3-year fully funded PhD position is available in the Department of Electronic and Electrical Engineering, University of Sheffield. The aim for this project is to design and develop novel gallium nitride (GaN) electronic devices. GaN is poised to replace silicon and other III-V semiconductor materials in high power and high speed RF and power switching electronics as it offers significant advantages such as high breakdown field and low on-resistance. These advantages enable compact and high efficiency power supplies and amplifiers to be realised.

The research will involve device design and nanofabrication at University of Sheffield’s state-of-the art cleanroom facilities for high power RF and/or switching applications. The successful candidate will carry out device characterisation (high voltage/current, switching and RF measurements) and conduct simulations to model the device characteristics. This project also provides a unique opportunity for students to work with our academic collaborators including Cambridge, Manchester and Cardiff Universities as well as industry partners.

Applicants should have a first class or good 2:1 first degree (BEng/BSc/MEng) in electrical or electronic engineering. 

Award for UK students cover tuition fees and a maintenance allowance at the standard RCUK rate – currently at £14296 pa. EU national who has been resident in the UK for at least 3 years prior to starting the course are also eligible for awards that cover tuition fees and a maintenance allowance. Exceptional overseas students or EU applicants who do not meet the residency requirements may be eligible for tuition waiver and/or scholarship.

Please contact Dr Kean Boon Lee (Email: for further details or discussions.

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Northern England