Research Associate in III-nitride semiconductors and devices
University of Sheffield - Department of Electronic and Electrical Engineering
|Salary:||£30,175 to £33,943 Grade 7|
|Contract Type:||Contract / Temporary|
|Placed on:||4th October 2016|
|Closes:||3rd November 2016|
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Fixed term until 31st March 2020
Faculty of Engineering
The Department of Electronic and Electrical Engineering is respected internationally for the important contributions it makes in this field. It has the second highest research income in the UK in this subject area. We are a vibrant community of 40 academic staff, 48 research staff, 25 technical staff, 23 administrative staff and over 750 undergraduate and postgraduate students. The Department is organised into three research groups: Communications and Imaging, Electrical Machines and Drives and Semiconductor Materials and Devices. For further information about the Department of Electronic and Electrical Engineering go to: www.shef.ac.uk/eee
The post is based within the Centre for GaN Materials and Devices (http://gancentre.group.shef.ac.uk/). The Centre currently has 22 team members including academic members of staff, a research administrator, research fellows and Ph.D students, and is equipped with two advanced III-nitride based MOVPE systems, comprehensive optical systems for advanced research on III-nitrides, and a number of facilities for device fabrication and device testing.
The post holder will work closely with a large number of collaborators from other Universities and industrial partners in order to achieve III-nitride and other III-Vs integrated materials and devices on patterned substrates using advanced MOVPE overgrowth technique, which will be characterized by a number of advanced optical/electrical and structural systems. She/he will need to prepare and present results regularly, and will help to co-ordinate progress meetings. She/he will need to publish articles in high-profile journals, attend project progress meetings and international/domestic conferences.
Candidates are sought who have a strong scientific background in III-nitride based semiconductor physics and fundamental semiconductor physics, with a PhD in semiconductor materials and device fabrication or equivalent experience. Experience in structural and optical characterisation of III-nitride semiconductors and skill in advanced MOVPE overgrowth on patterned substrates is also essential.
This post is fixed term until 31st March 2020.
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