PhD studentship - Transfer printing of novel III-nitride based hybrid optoelectronics
University of Sheffield - Department of Electronic and Electrical Engineering
|Funding for:||UK Students|
|Funding amount:||Not specified|
|Placed on:||21st November 2016|
|Closes:||31st December 2016|
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The III-nitride materials including GaN remain a rapidly growing field with applications across solid state lighting, UV and visible LEDs and lasers, power and RF electronics. Transfer printing is a key emerging technology in the field of semiconductor device fabrication allowing the fabrication of devices consisting of many different materials with dissimilar properties. In this project, novel GaN based optoelectronic devices will be developed utilizing transfer printing techniques to stack III-nitride materials on non-native substrates and combine these III-nitride semiconductor materials with a range of other functional materials including organic light emitters.
This approach will allow the strengths of different materials systems to be exploited and combined to produce high performance light emitting devices such as LEDs and lasers emitting over the full visible spectrum.
Your work will focus on developing and applying transfer printing techniques appropriate for III-nitrides and the complimentary hybrid materials. This will also involve a range of device fabrication techniques, working in the cleanroom and characterization of the hybrid material devices fabricated.
The studentship is based within the Centre for GaN Materials and Devices. Led by Professor Tao Wang the Centre currently has 22 team members including academic members of staff, a research administrator, research fellows and Ph.D. students, and is equipped with two advanced III-nitride based MOVPE systems, comprehensive optical systems for advanced research on III-nitrides, and a number of facilities for device fabrication and device testing.
This project will best suit a graduate in Physics, Materials or Electronic & Electrical Engineering with a background in semiconductor materials & physics. Applicants should hold a minimum of a UK Honours Degree at 2:1 or its international equivalent.
The studentship is fully funded for 3.5 years. Applicants must have UK Home Fee status, or EU citizenship and been resident in the UK for at least three years prior to the start of the project. Funding covers tuition fees and a tax-free living allowance at the current EPSRC rate or equivalent.
Application and enquiries
For more information on post graduate research in EEE and the application process visit www.sheffield.ac.uk/eee/pgr. Informal enquiries can be addressed to Dr Rick Smith.
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