Research Associate in III-Nitride Materials and Devices

University of Sheffield - Department of Electronic and Electrical Engineering

Contract Type: Fixed term until 30 April 2020 with a start date as soon as possible

Faculty: Faculty of Engineering

The Department is respected internationally for its many important contributions in the field of electronic and electrical engineering (www.shef.ac.uk/eee). We currently have 46 academic staff, including 22 Professors, and a student community of approximately 800 comprising undergraduate, postgraduate taught and research students. Our teaching is underpinned by research at the leading edge, with world-class laboratories available to undergraduates and postgraduates. The Department is organised into three research areas: Semiconductor Materials and Devices, Communications, and Electrical Machines and Drives. Further details on each of the research areas can be accessed via the above Departmental web link. The Department has been awarded an Athena Swan Bronze Award, for its support of representation of Women in Science, Technology, Engineering, Medicine and Mathematics.

The Research Associate will be based within the Centre for GaN Materials and Devices (gancentre.group.shef.ac.uk). The Centre currently has 26 team members including academic members of staff, a research administrator, research fellows and PhD students, and is equipped with two advanced III-nitride based MOVPE systems, comprehensive optical systems for advanced research on III-nitrides, and a number of facilities for device fabrication and device testing.

You will work closely with a large number of collaborators from other Universities and industrial partners in order to achieve next generation semi-polar and non-polar III-nitride based Photonics and Electronics using advanced MOVPE overgrowth techniques, which will be characterised by a number of advanced optical and structure characterisation systems. You will need to prepare and present results regularly, and will help to co-ordinate progress meetings. You will need to publish articles in high-profile journals, attend project progress meetings and present results at international/domestic conferences.

Candidates are sought who have a strong scientific background in III-nitride based semiconductor physics and fundamental semiconductor physics, with a PhD in semiconductor material growth and device fabrication (or equivalent experience). Significant experience in advanced MOVPE overgrowth on patterned substrates and structural and optical characterisation of III-nitride semiconductors is essential.

This post is fixed term until 30 April 2020.

We’re one of the best not-for-profit organisations to work for in the UK. The University’s Total Reward Package includes a competitive salary, a generous Pension Scheme and annual leave entitlement, as well as access to a range of learning and development courses to support your personal and professional development.

We build teams of people from different heritages and lifestyles whose talent and contributions complement each other to greatest effect. We believe diversity in all its forms delivers greater impact through research, teaching and student experience.

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Northern England