|Funding for:||UK Students, EU Students|
|Funding amount:||fees and stipend at UK/EU rates|
|Placed On:||6th February 2019|
|Closes:||31st July 2019|
Location: University Park
PhD studentship Sponsored by Texas Instruments Incorporated (TI)
Based at the Centre for Additive Manufacturing (CfAM)
University of Nottingham
This 3 year PhD studentship, is based at the world-renowned Centre for Additive Manufacturing (CfAM) at The University of Nottingham in partnership with global electronics manufacturer Texas Instruments Incorporated. For further information, please visit www.nottingham.ac.uk/research/groups/cfam
Project title: Vulcan – Vat photopolymerization on wafer printing
Spin coating of photoactive polymers in conjunction with photolithography is extensively used in semiconductor fabrication. This technology is used both on the front end fab (i.e. integrated circuit fabrication) and back end packaging (e.g. redistribution layers). This process is inherently limited though to thin layers (<20 um in many cases) and rectangular geometries. Furthermore, if a thicker layer is desired it is not as simple as dispensing additional materials but instead requires multiple process steps before another layer can be added. As AM technologies advance and printed electronics (PE) applications continue to mature there will be a need to utilize vat photopolymerization as a method to expand the design space of polymer on wafer applications.
This project is targeting the development of photoactive resin systems and processes for them that can be utilized to build arbitrary geometries onto silicon wafer surfaces. Expanding design parameters of polymer on wafer is anticipated to open up new avenues in both front and back end applications. For front end, there is the possibility of controlling etch/deposition rates and depths as wells the ability to vary designs across a single wafer. For back end, there are applications in terms of in-package stress reduction, die-to-die interconnects, in-package passives and many, many more applications. It is expected that through this project a new kind of paradigm concerning wafer level fabrication will be developed for next generation semiconductor devices.
The successful candidate will:
Applicants should possess a minimum 2:1 in Materials Science, Physics, Chemistry, Engineering, or a related discipline.
How to apply
Please send your covering letter, CV and academic transcripts to firstname.lastname@example.org referring to the project title. Please note applications without academic transcripts will not be considered.
The successful candidate will be available to start on 1st October 2019.
Type / Role: