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KTP Associate Galllium Nitride Wide Bandgap Semiconductor Device Power Device Technology

University of Bristol - Faculty of Science

Location: Bristol
Salary: £28,000 to £35,000 per annum
Hours: Full Time
Contract Type: Fixed-Term/Contract
Placed On: 6th September 2021
Closes: 18th October 2021
Job Ref: ACAD105532

The role (a high-level description of the job, team etc.):

This is an exciting opportunity for an ambitious graduate (Master or PhD) with the ability and confidence to manage a Knowledge Transfer Partnership (KTP) project with Dynex Semiconductor.

The University of Bristol and Dynex Semiconductor are looking to recruit a talented candidate to undertake an exciting 27 month project to create an innovative physics-based design capability at Dynex Semiconductor.

Based at Dynex Semiconductor in Lincolnshire and the Centre for Device Thermography and Reliability (CDTR) at the University of Bristol you will work directly with supervisors from both the University and Dynex Semiconductor and will use the facilities and resources of both organisations, though the major of your time would be spent at Dynex Semiconductor. At the University of Bristol, this KTP is aligned with the Chair in Emerging Technologies awarded to Professor Kuball, Director of the CDTR, by the Royal Academy of Engineering (RAEng) in 2020, and the Department of Energy funded ULTRA EFRC Centre the CDTR is partnered in. Offering high power IGBT modules and bipolar products, Dynex manufactures high performing and reliable devices that are currently in service in over 60 different countries around the world. Its IGBT modules encompass Power Cycling with the latest generation IGBT die. Dynex Bipolar capsules offer a reliable and efficient transfer of energy for a range of applications. The Dynex team undertakes extensive research projects and experiments to guarantee our products stand the test of time and work rigorously in severe environments, whilst supporting global initiatives to reduce carbon footprint and emission.

This post is funded through a Knowledge Transfer Partnership (KTP) award, a UK Government scheme intended to promote sustained and mutually beneficial relationships between universities and industry.

The successful candidate would be responsible for managing and delivering a Knowledge Transfer Partnership (KTP) project. The aim of the KTP project is to create an innovative physics-based design capability within Dynex to enable the realisation of efficient and reliable high power GaN transistor switches. This will be compatible with advanced industrial power electronic module packaging technologies, and facilitate the establishment of a UK manufacturing capability at Dynex Semiconductor.

Global challenges in achieving net carbon zero, reducing air pollution and waste has driven the need to improve the efficiency of power electronic equipment. For example: electric vehicles, industrial equipment; power supplies and equipment for energy transmission and power quality management. This requires improved energy efficiency, reduction in size and weight reaching beyond the capability of the silicon power devices that control this equipment. This is driving an accelerated development of emerging power semiconductor materials, mainly silicon carbide "SiC" and gallium nitride "GaN", that offer superior efficiency, reduced size and weight to high power electronic equipment.

You should apply if (what experience is necessary for candidates to possess, to drive self-selection):

You will be required to have a degree at Masters or PhD level, in the fields of electrical engineering, physics and material science, with strong research experience in semiconductor materials and/or devices.

Due to the nature of the funding, KTP Associates who have already completed a KTP are not eligible to apply.

For informal queries” contact/s details:

Professor Martin Kuball, Royal Academy of Engineering Chair in Emerging Technologies
T: 0117 928 7634

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