|Funding for:||UK Students, EU Students, International Students|
|Funding amount:||3.5 years at the UKRI rate (currently £15,609 per annum for 2021/22)|
|Placed On:||30th November 2021|
|Closes:||31st January 2022|
The imminent climate risks for our planet have been highlighted by UN's Intergovernmental Panel on Climate Change (IPCC) calling it "code red for humanity" in its scientific report in August 2021. There is an urgent need for our society to use energy more efficiently and new semiconductor power electronics, converting energy with as little loss as possible, is critically important to achieve this. This project will focus on the new ultra-wide bandgap semiconductor Ga2O3.This material is primed to be game changer for power electronics, in particular for high voltage applications (>2kV). In this project, you will grow Ga2O3 taking advantage of the recent installation of an Ga2O3 MOCVD growth system in Bristol, and fabricate next generation power devices using our extensive clean room laboratories. Integration of Ga2O3 with diamond is one aspect that will be targeted to enable ultrahigh performance devices; the Ga2O3 material properties enhanced by diamond’s good heat sinking capability and the ability to p-dope diamond (in contrast to Ga2O3 which can only be n-doped) will enable ultrahigh performance power electronic devices, see e.g. Mishra et al, IEEE Trans Electron Dev 68, 5055 (2021). Apart from demonstrating high power high voltage power electronic devices, you will study the underlying physics/engineering of the devices and what limitation are imposed e.g. by traps including interface traps and how these be managed and mitigated for. Though this is mainly an experimental project you will also use simulation techniques, such as Silvaco or ANSYS, to gain a better understanding of your experimental data. The project is within the Centre for Device Thermography and Reliability (CDTR), an internationally leading centre in semiconductor RF and power devices, with its 20 member international team.
How to apply:
Please make an online application for this project at http://www.bris.ac.uk/pg-howtoapply. Please select Physics PhD on the Programme Choice page. You will be prompted to enter details of the studentship in the Funding and Research Details sections of the form. Please make sure you include the title of studentship and the contact supervisor in your Personal Statement.
Candidates should have completed an undergraduate degree (minimum 2(i) honours or equivalent) in Physics, Material Science or Engineering, preferably with some prior experimental experience in semiconductor materials or devices.
This studentship is fully funded under the EPSRC Doctoral Training Partnership. Funding will cover tuition fees at the UK student level and an annual stipend for up to three and half years at the standard UKRI stipend rate (currently £15,609 per annum for 2021/22).
Martin Kuball, Royal Academy of Engineering Chair in Emerging Technologies, Martin.Kuball@bristol.ac.uk
Subject Areas: Map your PhD to a maximum of 10 subject areas:
Applied Physics, Materials Science, Semiconductors, Solid State Physics, Electrical and Electronic
Type / Role: