Research Associate in III-nitride Semiconductors and Devices

University of Sheffield - Department of Electronic and Electrical Engineering

Contract Type: Fixed term until 31 December 2019

Faculty: Faculty of Engineering


The Department of Electronic and Electrical Engineering is respected internationally for the important contributions it makes in this field. It has the second highest research income in the UK in this subject area. We are a vibrant community of 40 academic staff, 48 research staff, 25 technical staff, 23 administrative staff and over 750 undergraduate and postgraduate students. The Department is organised into three research groups: Communications and Imaging, Electrical Machines and Drives and Semiconductor Materials and Devices. For further information about the Department of Electronic and Electrical Engineering go to:

The post is based within the Centre for GaN Materials and Devices ( The Centre currently has 22 team members including academic members of staff, a research administrator, research fellows and PhD students, and is equipped with two advanced III-nitride based MOVPE systems, comprehensive optical systems for advanced research on III-nitrides, and a number of facilities for device fabrication and device testing.

The post holder will work closely with a large number of collaborators from other Universities and industrial partners in order to achieve integrated devices combining III-nitrides and other III-Vs on patterned substrates, where the fabrication of novel patterned substrates and the design & fabrication of the integrated devices will be the key elements. She/he will need to prepare and present results regularly, and will help to co-ordinate progress meetings. She/he will need to publish articles in high-profile journals, attend project progress meetings and international/domestic conferences.

Candidates are sought who have a strong scientific background in III-nitride based semiconductor physics, with a PhD in semiconductor materials and device fabrication or equivalent experience. Experience in optical and electronic device fabrication, in particular integrated devices, and skill in the fabrication of patterned substrates, are also essential.

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Northern England