Fully funded PhD Studentship – Hybrid Photonics - III-nitride based Hybrid Optoelectronic Devices by Transfer Printing

University of Sheffield - Electronic and Electrical Engineering

Project description

The III-nitride materials including GaN remain a rapidly growing field with applications across solid state lighting, UV and visible LEDs and lasers, power and RF electronics. Transfer printing is a key emerging technology in the field of semiconductor device fabrication allowing the building of devices consisting of many different materials with dissimilar properties. In this project, novel GaN based optoelectronic devices will be developed utilizing transfer printing techniques to stack III-nitride light emitters and combine these III-nitride semiconductor materials with a range of other functional materials including organic light emitters and quantum dots. These hybrid material devices will be printed into photonic structures such as micro-cavities to modify the coupling between the different materials within the devices.

This additive approach will allow the strengths of different materials systems to be exploited and combined to produce high performance light emitting devices such as LEDs and lasers emitting over the full visible spectrum.

Your work will focus on applying transfer printing techniques to build novel hybrid photonic devices, characterizing their behaviour and optimizing the design of the photonic structures. This will involve a range of device fabrication techniques, working in the cleanroom and optical characterization of the hybrid material devices fabricated.

The studentship is based within the Centre for GaN Materials and Devices. Led by Professor Tao Wang the Centre currently has 22 team members including Dr Rick Smith as an academic member of staff, a research administrator, research fellows and Ph.D. students, and is equipped with two advanced III-nitride based MOVPE systems, comprehensive optical systems for advanced research on III-nitrides, and a number of facilities for device fabrication and device testing.

Academic requirements

This project will best suit a graduate in Physics, Materials or Electronic & Electrical Engineering with a background in semiconductor materials & physics. Applicants should hold a minimum of a UK Honours Degree at 2:1 or its international equivalent.

Funding notes

The studentship is fully funded for 3.5 years applicants must have UK Home Fee status, or EU citizenship and been resident in the UK for at least three years prior to the start of the project. Funding covers tuition fees and a tax-free living allowance at the current EPSRC rate or equivalent.

Application and enquiries

Interested applicants should apply by submitting their CV and covering letter to Dr Rick Smith (Richard.smith@sheffield.ac.uk) or Ms Katherine Greenacre at k.greenacre@sheffield.ac.uk;

For more information on post graduate research in EEE and the application process visit www.sheffield.ac.uk/eee/pgr. Informal enquiries can be addressed to Dr Rick Smith.

Funding

UK/ EU Fees 3.5 years

UK/EU Fees and RCUK stipend 3.5 years

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Type / Role:

PhD

Location(s):

Northern England