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Research Associate: Advanced Epitaxy for Semiconductor Optoelectronics

Cardiff University - School of Physics & Astronomy

Location: Cardiff
Salary: £33,199 to £39,609 Grade 6, per annum
Hours: Full Time
Contract Type: Fixed-Term/Contract
Placed On: 8th November 2018
Closes: 12th December 2018
Job Ref: 7988BR

Applications are invited for a postdoctoral research position funded by the Ser Cymru project and associated with the Institute for Compound Semiconductors (ICS) in the School of Physics and Astronomy at Cardiff University.  The role will conduct research & development associated with advanced epitaxial methods and nanoscale materials for integrated optoelectronic devices as part of the Ser Cymru Research Group and the ICS. The ICS is part of a > £300m investment initiative by Cardiff University and the Welsh Government in a new research and innovation campus, and will enable increased industrial exploitation along with novel research and technology transfer to position Cardiff as the UK and European leader in the research and development and applications of compound semiconductors. Both ICS and Cardiff University are founding members of the Compound Semiconductor Cluster in South UK.

The envisioned research will develop micro- and nano-structured Metal Organic Vapour Phase Epitaxy (MOVPE) methods for semiconductor devices on the silicon platform. Example projects may include vertical cavity lasers on silicon, infrared devices, quantum dots and nanowires for quantum emitters.  This work will focus specifically in arsenic (As), antimony (Sb) and phosphorous (P) materials for near-term applications with relevance to industrial collaborators in within UK and EU. However, independent research aligned with the Ser Cymru and ICS activity are highly encouraged.

Candidates will have a PhD in Engineering, Physics or Materials Sciences focusing on advanced optoelectronic materials and devices with emphasis on the epitaxy. Hands-on ability in epitaxy of III-As, -Sb or -P compounds is essential.  Experience involving epitaxial integration of III-V on Si, lattice-mismatched materials along with patterned or nanoepitaxy is highly desirable. Additional skills associated with materials characterization, fabrication or devices are also desired. You will have a strong research record demonstrated through publications in high quality academic journals; experience participating in research proposals and research/industry-based groups with proven ability to network effectively with academics and outside academia.

With your completed application, please submit your full CV and a statement of research interests and career goals (2 pages max).

For informal enquiries please email Professor Diana Huffaker on 

For more information about working at Cardiff University contact Glesni Lloyd on

This full-time post is fixed term for 2 years.

Salary: £33,199 - £39,609 per annum (Grade 6)

Closing Date: Wednesday, 12 December 2018

Cardiff University reserves the right to close this vacancy early should sufficient applications be received.

Cardiff University and the School of Physics and Astronomy are committed to supporting and promoting equality and diversity. Our inclusive environment welcomes applications from talented people from diverse backgrounds. We strongly welcome female applicants and those from any ethnic minority group, as they are underrepresented in our School. The School of Physics & Astronomy has a Juno Practitioner accreditation that recognises good employment practice and a commitment to develop the careers of women working in science. The University is committed to ensuring that we sustain a positive working environment for all staff to flourish and achieve. As part of this commitment, the University has developed a flexible and responsive framework of procedures to support staff in managing their work and personal commitments wherever possible. Applications are welcome from individuals who wish to work part-time or full time.

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