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PhD Studentship in Nano-electronics

Liverpool John Moores University - Department of Electronics and Electrical Engineering

Qualification Type: PhD
Location: Liverpool
Funding for: UK Students, EU Students
Funding amount: £14,777
Hours: Full Time
Placed On: 18th January 2019
Closes: 4th March 2019

PhD Studentship in Nano-electronics:

Resistive-switching memory devices (ReRAM/FeRAM or memristor) and its application in neuromorphic and in-memory computing systems.

Applications are invited for a full PhD scholarship in the Department of Electronics and Electrical Engineering, Liverpool John Moores University (LJMU).

This fully funded three year PhD Scholarship would comprise annual fees, a contribution towards running costs, plus an annual stipend of currently £14,777 per annum.

Eligibility: Only UK/EU citizens are eligible.

Qualification: Applicants should hold (or expect to get) a good (first class or upper second class) Honours undergraduate degree or a Master degree.

Location: LJMU (Liverpool, UK) and IMEC (Leuven, Belgium)

Duration: full-time, three years. The PhD studentship must be filled by September 2019.

Application deadline: 04 March 2019

This PhD project will be in collaboration with the world-leading memory device consortium at IMEC, Belgium, whose members include top companies such as Intel, Micron, Samsung, Toshiba and Western Digital. The student will have chances to work at IMEC together with scientists from the above mentioned organisations, providing excellent opportunities for career development.

The research will focus on developing and characterizing novel resistive-switching memory devices (ReRAM/FeRAM or memristor) and its application in neuromorphic and in-memory computing systems. The conductance in a resistive-switching device can be varied and memorized in thin semiconductor or metal oxide dielectric or ferroelectric materials, which are easier to programme either fully or partially on/off and they exhibit random behaviour. These features make them ideally placed for novel neuromorphic and in-memory computing systems. This technology is expected to become one of the major driving forces to support the ICT industry for the next 20 years through a range of disruptive inventions in digital memory, bio-inspire machine learning, artificial intelligence, low power reconfigurable in-memory computing, and Internet of things (IoT). It will drastically enhance not only the performance of non-volatile memories, but may also revolutionize the computing systems beyond the conventional Von Neumann architecture.

Professor Weidong Zhang and his group at LJMU have extensive research expertise into the use and characterisation of various resistive-switching memory devices, through close collaboration with IMEC in the past 10 years. The Microelectronics Research Group at LJMU has well established research record and advanced research facilities. In the latest UK's official Research Excellence Framework (REF) 2014, LJMU is one of the top performing universities in Electrical and Electronic Engineering. 100% of our research outputs have been assessed as international excellence. Detailed information of the research group can be found in the following link: The studentship is subject to the selection procedure within the University and the Faculty.

We are seeking candidates with strong background and interest in the area of Electrical and Electronic Engineering, or physics/material.

Application procedure:

To apply for the PhD studentship, please first contact the supervisor, Prof. Weidong Zhang ( to discuss the details of the PhD project and application, by sending your full CV, transcripts and a personal statement. You must clearly state your nationality, residence status, education, degree classification and contact details and confirm your willingness to accept the offer if the application is approved. You will need to submit all the required the documents online before 04 March 2019 at, where more details can be found.

Only UK/EU citizens are eligible.

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