|Funding for:||UK Students, EU Students|
|Funding amount:||Minimum £15,009 p.a. (subject to contracts)|
|Placed On:||7th May 2019|
|Closes:||30th August 2019|
Current flagship high-end smartphones (like the IPhone-X or similar) use on the order of 30 high frequency RF filters and as we move towards widespread 5G adoption, this number is expected to increase as we add more frequency bands . Currently, these systems are built in a packaging tour-de-force (see for ex: Qualcomm’s RF 360 module, Qorvo Fusion or equivalent) wherein multiple individual discrete filters are mounted and interfaced with the power amplifier / LNA in a single multi-chip module. But while these systems are referred to as integrated front ends, they still rely on discrete components and impedance matching and require complex packaging. In this project, we aim to exploit the high mobility and piezoelectric properties of GaN by building integrated platforms that interface acoustic devices (SAW filters) with GaN HEMTs (both power amplifiers on the transmit and low noise amplifiers on the receive end).
Gallium nitride (GaN) holds a special place amongst semiconductors because it is the only material with a technologically desirable combination of electrical (high band-gap, high electron mobility), optical (direct band-gap) and mechanical (low intrinsic dissipation and high piezoelectric coefficient) properties . The ability to exploit more than one behaviour of a material simultaneously allows us to build devices and systems that achieve performances that are hard to match with hybrid integration of multiple materials. This is especially true as we move towards higher operating frequencies (> 2 GHz), where device parasitics become increasingly important.
URL for further information: http://krishna-balram.appspot.com/
How to apply:
Please make an online application for this project at http://www.bris.ac.uk/pg-howtoapply. Please select < Electrical and Electronic Engineering> on the Programme Choice page and enter details of the studentship when prompted in the Funding and Research Details sections of the form with the name of the supervisor.
Candidates should possess a minimum 2:1 honour degree in Electrical Engineering, Physics or a related discipline.
Candidates interested in RF engineering, nanofabrication, semiconductor devices and hands on experiments are encouraged to apply.
Scholarship covers full UK/EU (EU applicants who have been resident in the UK for 3 years prior to 1st September 2019) PhD tuition fees and a tax-free stipend at the current RCUK rate (£15,009 in 2019/20). EU nationals resident in the UK may also apply but will only qualify for PhD tuition fees.
Informal enquiries, please email Dr Krishna Coimbatore Balram, email@example.com
General enquiries, please email firstname.lastname@example.org
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