|Funding for:||UK Students, EU Students|
|Funding amount:||Not Specified|
|Placed On:||30th July 2019|
|Closes:||30th November 2019|
Applications are invited for a fully-funded 3.5 year PhD studentship to work on (1) Advanced MOVPE epitaxial growth of novel III-nitride semiconductors and advanced material characterisation (2) Advanced fabrication of the integrated devices combining III-nitride and other III-V semiconductors.
The studentship holder will work closely with a large number of collaborators from other Universities and industrial partners in order to achieve integrated devices combining III-nitrides and other III-Vs on patterned substrates, where the advanced epitaxial growth and novel device fabrication of the integrated devices are essential for the project. She/he will need to prepare and present results regularly, and will need to publish articles in high-profile journals, attend project progress meetings and international/domestic conferences.
The studentship is based within the Centre for GaN Materials and Devices led by Professor Tao Wang. With 30 members, two MOCVD systems and a large number of material characterisation systems and extensive device testing facilities of a high standard for the advanced research of III-nitrides, the Centre for GaN materials and Devices is one of the largest GaN research groups in the UK.
This project will best suit a graduate in Physics, Materials or Electronic & Electrical Engineering with a strong background in semiconductor materials & physics. Candidates from a Physics department are particularly welcome. A first-degree of class 1 or 2:1 class or its international equivalent is required.
The studentship is fully funded for 3.5 years and is open to UK/EU applicants who meet the University’s entrance requirements. Funding covers tuition fees and a tax-free living allowance at the current EPSRC rate or equivalent.
Application and enquiries
The studentship can start at the earliest opportunity.
Type / Role: