|Funding for:||UK Students|
|Funding amount:||Not Specified|
|Placed On:||19th November 2021|
|Closes:||31st January 2022|
Applications are invited for a fully-funded 3.5 year PhD studentship to work on fabrication and characterisation of Novel III-nitride Semiconductor Based Laser Diodes on a microscale for VLC and micro-display.
The studentship holder will work closely with a large number of collaborators from other Universities and industrial partners in order to achieve III-nitride Semiconductor Based Laser Diodes on a microscale for VLC and micro-display. The project involves a wide range of activities from device design through material growth & device fabrication to final device characterization. They will need to prepare and present results regularly, and will need to publish articles in high-profile journals, attend project progress meetings and international/domestic conferences.
The studentship is based within the Centre for GaN Materials and Devices led by Professor Tao Wang. With 30 members, two MOCVD systems and a large number of material characterisation systems and extensive device testing facilities of a high standard for the advanced research of III-nitrides, the Centre for GaN materials and Devices is one of the largest GaN research groups in the UK.
Eligible applicants must demonstrate excellent academic performance with strong semiconductor physics background. Applicants with a 1st degree from a Physics Department can be considered as a priority.
The studentship is fully funded for 3.5 years and is open to home applicants who meet the University’s entrance requirements. Funding covers tuition fees and a tax-free living allowance at the current EPSRC rate or equivalent.
Application and enquiries
The studentship can start at the earliest opportunity.
Type / Role: