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Funded PhD Studentship in Semiconductor Epitaxy at the UK National Epitaxy Facility

University of Sheffield - National Epitaxy Facility, Department of Electronic & Electrical Engineering

Qualification Type: PhD
Location: Sheffield
Funding for: UK Students, EU Students, International Students
Funding amount: For UK students cover 100% of tuition fees plus a maintenance allowance (the 2023-24 RCUK standard stipend is £18,622 per annum)
Hours: Full Time
Placed On: 12th January 2024
Closes: 31st December 2024

The EPSRC National Epitaxy Facility has a funded PhD studentship available for research and development in the epitaxy of semiconductor materials and devices. There are a broad range of research projects available for the successful applicants in areas such as quantum technology, integrated photonics, electronics and sensing. The impact of the research will lead to new types of quantum computers, new lasers increasing the speed of the internet, electronics for manufacturing, and new sensing technologies for monitoring climate change and improving healthcare technologies.

The National Epitaxy Facility is a Centre-of-Excellence for semiconductor epitaxy in the UK and is funded by the Engineering and Physical Sciences Research Council (EPSRC). The facility’s staff have developed world-class epitaxy skills and capabilities over a period of more than 40 years. The facility is home to state-of-the-art equipment and it currently supports research grants in excess of £150m in over 25 top Universities in the UK and significant work with the UK semiconductor industry.

The studentship is a unique opportunity to be trained as an epitaxy specialist. You will be trained in one of the world's leading centres of excellence conducting research at the forefront of developments in next generation semiconductor materials and devices.

The Facility is a collaboration between the Universities of Sheffield, Cambridge, and University College London and is home to 11 state-of-the-art epitaxial reactors, including Metal-Organic Vapour-Phase Epitaxy (MOVPE) and Molecular Beam Epitaxy (MBE) reactors, as well as a wide range of semiconductor characterization equipment (such as SEM, AFM, XRD, eCV, Hall, Nomarski, low- and room-temperature PL).

The successful applicant will gain expertise in MBE or MOVPE compound semiconductor growth, and a range of material and device characterisation techniques. Joining our experienced and diverse team, you will become the next generation as an epitaxy expert addressing the global skills shortage in the rapidly expanding semiconductor sector.

The studentship is best suited to candidates with a keen interest in semiconductor materials, devices and characterization techniques, and a solid background in semiconductor physics or engineering.

Funding

Funding awards for UK students cover 100% of tuition fees plus a maintenance allowance (the 2023-24 RCUK standard stipend is £18,622 per annum). EU and international students are also eligible for award but additional fees may apply. Self-funded overseas applicants are also welcome.

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