Fully Funded EPSRC iCASE and Siemens PhD Scholarship: Gallium Nitride High Voltage Power Management

Funding providers: EPSRC iCASE and Siemens

Subject areas: Wide Bandgap Semiconductors, Power Electronics

Project start date: 

• 1 October 2024 (Enrolment open from mid-September)

Project description: 

The project will work alongside a leading industrial partner (Siemens), which brings together a number of world leaders in power electronics and energy conversion to develop solutions for Industrial motor drives as a primary application as well renewable energy as a secondary application. The purpose is to improve the UKs energy infrastructure in applications such as manufacturing, warehousing, utilities supply, food & beverage processing and many others as we move into a low carbon economy. A paradigm shift in technology will be required in order to cope effectively with an ever-increasing amount of renewable energy being brought online. It is envisaged that other forms of renewable energy, e.g. tidal, solar could also play a role alongside traditional coal fired power stations and nuclear energy generation. Revolutionary changes to power conversion is indispensable if these carbon emissions targets are to be met. The objective is to enable a step change in power density, energy efficiency, sustainability in transmission and distribution through novel power electronics solutions and products based on new materials. At the heart of such systems are power semiconductor devices.

The advantages of wide bandgap materials such as silicon carbide (SiC) and gallium nitride (GaN) for power electronic applications are well documented. High voltage GaN is an emerging semiconductor technology that has recently been identified as a promising candidate for power electronics with the potential to have an impact in the medium voltage range (650V – 3.3kV). There are very few reports on this exciting new technology. This project is aimed at understanding the fundamental performance limit of vertical GaN power devices through advanced modelling (electrical and thermal), device fabrication and testing, including a reliability analysis. A self-motivated individual who will be based between the Siemens facility (Siemens Power Electronics Innovation hub) in Newport and the Faculty of Science and Engineering (FSE) will conduct research into the latest GaN power electronic devices. The research work will be undertaken in a state of the art, brand new Centre of Integrative Semiconductor Materials (CISM) cleanroom. For more details regarding this world-class facility see here: the new Centre for Integrative Semiconductor Materials (CISM) – Swansea University’s flagship new £55M facility for advanced semiconductor research and development.

Application areas: Renewable Energy (wind, photovoltaic, tidal, etc.), Industrial motor drives, Automotive.

Eligibility

Candidates must hold an undergraduate degree at 2.1 level (or Non-UK equivalent as defined by Swansea University) in Engineering or similar relevant science discipline. If you are eligible to apply for the scholarship but do not hold a UK degree, you can check our comparison entry requirements. Please note that you may need to provide evidence of your English Language proficiency.

English Language: IELTS 6.5 Overall (with no individual component below 5.5) or Swansea University recognised equivalent.

This scholarship is open to candidates of any nationality.

Please visit our website for more information on eligibility.

Additional Funding Information

This scholarship covers the full cost of UK tuition fees and an annual stipend at £19,237 and an annual £2,500 top-up.

Additional research expenses will also be available.

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