Location: | Sheffield |
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Salary: | £38,249 to £46,735 |
Hours: | Full Time |
Contract Type: | Fixed-Term/Contract |
Placed On: | 18th June 2025 |
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Closes: | 16th July 2025 |
Job Ref: | 1198 |
We are seeking a committed and motivated Research Associate with a keen interest in Molecular Beam Epitaxy (MBE) to join our EPSRC National Epitaxy Facility. As a Research Associate, the post holder will carry out original research on III-V semiconductor epitaxy contributing to projects in quantum technologies and integrated photonics. The Facility supports over £100M of research grants in more than 30 UK Universities and plays a major role in semiconductor research through the provision of world class epitaxial materials.
You will be responsible for:
This post provides an opportunity to make a difference in this highly topical field. It will lead high quality research in collaboration with leading researchers and industry in a National Facility.
We are looking for someone educated to PhD level (or close to completing) in Molecular Beam Epitaxy (or a related subject) (or have equivalent experience). The ideal candidate will have a strong background in semiconductor epitaxy, with evidence for achievements in new material or device development. You will also have knowledge of experience of materials analysis techniques for semiconductor wafers including XRD, ECV, AFM, SEM, PL, Hall effect, and SIMS.
The School of Electrical and Electronic Engineering (EEE) belongs to the prestigious Faculty of Engineering. We are one of the largest academic communities of engineers in the UK, ranked joint 1st for Research Environment in the last Research Excellence Framework (REF 2021)! Our specific field (EEE) is also ranked very highly, which is a marker of our excellence and ambition (QS 2024: 11th in UK, The Guardian 2024: 3rd, The Times Higher 2024: 7th in the UK).
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