|Salary:||£32,344 to £40,927 per annum (up to £44,706 for staff already within the exceptional range of the grade)|
|Placed On:||10th September 2021|
|Closes:||8th October 2021|
The post holder will be based in the National Epitaxy Facility in Sheffield (https://www.nationalepitaxyfacility.co.uk) which is located within the Department of EEE. The post holder will carry out original research on III-V semiconductor epitaxy and, as part of the National Epitaxy Facility, will provide bespoke epitaxial wafers to academic and industrial users in the UK and internationally. The Facility currently supports over £100m of research grants in more than 20 UK Universities and plays a major role in UK semiconductor research through the provision of world class epitaxial materials.
They will be responsible for the development of MOVPE growth of As, P, and Sb based III-V semiconductors and will have access to the extensive MOVPE facilities in the Facility (three reactors) as well as major infrastructure for characterization and device fabrication. The role will involve development of the epitaxy technique itself, investigating such major innovations as site-control of quantum dots, selective area growth, III-V/Silicon growth, and new types of mixed material interband lasers and detectors. The post holder will also work with a range of collaborators and users of the Facility and will play a critical role in the development of unique and pioneering device concepts through world-class advanced MOVPE growth.
The post provides an ideal and exciting opportunity to make a difference in this highly topical field and to lead high quality research in collaboration with leading researchers and industry in a National Facility.
We are seeking candidates with a PhD in Metal Organic Vapour Phase Epitaxy (MOVPE) or equivalent experience in industry. A strong scientific background in semiconductor epitaxy, with evidence for achievements in new material or device development, is essential.
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