Postdoctoral Research Associate in ultrawide bandgap Gallium Oxide MOCVD Growth

The role

Applications are invited for the role of Postdoctoral Researcher position at the Centre for Device Thermography and Reliability (CDTR), led by Professor Kuball, to provide leading contributions in the field in MOCVD growth of Gallium Oxide and related alloys, with application in next generation high voltage devices. This role focuses on developing new materials and material structures high voltage electronics using MOCVD. This research position will give you the opportunity to make a major impact on future power device technology. This is a two-year position, initially.  

The CDTR is a vertically integrated research group, from semiconductor growth, materials analysis, device design, device fabrication and testing (electrical, reliability, thermal management) to packaging. A recent focus of our MOCVD research has been the growth of Gallium Oxide on diamond and other high-thermal conductivity substrates, to enable efficiently heat sunk devices. The University of Bristol has a state-of-the-art Agnitron MOCVD system for Gallium Oxide and Aluminium Gallium Oxide growth, with plans to expand to other oxide materials in the near future. In addition to MOCVD growth, you will have the opportunity to access materials characterization including x-ray diffraction, atomic force microscopy and transmission electron microscopy. Furthermore, you will have access to extensive device fabrication capabilities, and a device testing suite to perform advanced electrical, thermal to electric field analysis of devices, and simulation tools (ATLAS, ANSYS). Moreover, you will collaborate within our 35-member team as well as with our academic and industrial partners.  

The CDTR leads the UKRI Innovation and Knowledge Centre REWIRE, aimed at transforming next generation wide and ultrawide bandgap power electronics, and is part of Horizon Europe programmes on innovative cooling solutions for chips including Si based, using diamond in new ways, as well as European Space Agency (ESA) and DARPA programmes on high frequency high power RF electronics. This position benefits from the Chair in Emerging Technologies awarded to Professor Kuball, Director of the CDTR, by the Royal Academy of Engineering (RAEng). 

What will you be doing?

You will conduct research to advanced ultrawide bandgap semiconductor device technology and their understanding. Responsibilities include MOCVD growth of Gallium Oxide and related materials and characterization and testing of the grown material structures, using for example, transmission electron microscopy including lamella fabrication, X-ray diffraction (XRD). 

You will collaborate with the device researchers of CDTR, our academic and industrial partners and support short term industrial contract. 

You should apply if

Applicants should have postgraduate (PhD) experience in physics, materials science or engineering, or be working towards one, or equivalent professional qualification/experience. Ideally, with a good publication record. The position requires extensive expertise in MOCVD growth, preferably in Gallium Oxide, and in materials characterization, including AFM, XRD and Hall measurements. 

A willingness to work together with, and co-supervise, PhD students of the CDTR will be necessary. 

Additional information

Contract type: Open-ended with fixed funding for approx. 2 years

Interviews are anticipated to take place on 05/02/2026

The job title at the University of Bristol is known as Research Associate

For informal queries, please contact (not applications) to:

Professor of Physics M. Kuball, martin.kuball@bristol.ac.uk, tel +44(0)117 928 8734.

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